0910-300M - RF Transistor

Description

The 0910-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5% duty factor across the band 900 to 1000 MHz.

This hermetically solder-sealed transistor is specifically designed for P-Band radar applications.

Advanced Power Technology

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Datasheet Details

Part number	0910-300M
Manufacturer	Advanced Power Technology
File Size	105.69 KB
Description	RF Transistor
Datasheet	0910-300M Datasheet
Additional preview pages of the 0910-300M datasheet.

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Full PDF Text Transcription

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0910– 300M 300 Watts - 50 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5% duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 600 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.

Published: Jul 28, 2021 |